A nanostructured gate dielectric may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and simultaneously protects the organic semiconductor – which had previously been vulnerable to damage from the ambient environment – and enables the transistors to operate with unprecedented stability.

Via:: https://phys.org/news/2018-01-nanostructure-boosts-stability-thin-film-transistors.html

Nanostructure boosts stability of organic thin-film transistors

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