Racetrack memory is a potential next-generation solution for our digital storage devices. However, current experiments using single-layer ferromagnetic nanowires are less efficient than expected. New research published in Scientific Reports shows that replacing them with a double-layered synthetic ferrimagnet nanowire reduces electric current requirements by a factor of ten, and power requirements by a factor of one hundred.

Via:: https://phys.org/news/2017-07-synthetic-ferrimagnet-nanowires-efficient-memory.html

Synthetic ferrimagnet nanowires make more efficient memory devices

Leave a Reply