Scientists at Tokyo Institute of Technology and their team involving researchers of JASRI, Osaka University, Nagoya Institute of Technology and Nara Institute of Science and Technology have just developed a novel approach to determine and visualize the three-dimensional (3-D) structure of individual dopant atoms using SPring-8. The technique will improve the current understanding of the atomic structures of dopants in semiconductors correlated with their electrical activity and thus support the development of new manufacturing processes for high-performance devices.


Viewing atomic structures of dopant atoms in 3-D relating to electrical activity in a semiconductor

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